| TYPE | DESCRIPTION |
| Mfr | Honeywell Aerospace |
| Series | HTMOS™ |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | 8-CDIP Exposed Pad |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 100mA, 5V |
| Power Dissipation (Max) | 50W (Tj) |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | 10V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 28 V |
One River Electronics Ltd.
1507, Building 1 Vanke Red Building,Jinlong Road, Buji Street,Longgang District,Shenzhen City, Guangdong Province,P.R. China
lana@oneriverhk.com
+86-755-8417 5709
